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PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL Description

PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz .
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 199.

PTFB192503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250

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Thermally-Enhanced High Power LDMOS FETs Infineon Technologies
Infineon Technologies PTFB192503EL-like datasheet