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PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

Features

  • include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB192503FL Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz 20 50 19 Gain 40 18.

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Datasheet Details

Part number PTFB192503EL
Manufacturer Infineon
File Size 442.12 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB192503EL Datasheet

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Part Number Description
PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB192503FL Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.
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